Heterostructure Research | 2D FETs & WSe2 Memory Devices

Research Focus

My research focuses on the fabrication and characterization of van der Waals heterostructures. Specifically, I investigate WSe₂-based floating gate memory devices utilizing and high-performance non-volatile memory devices utilizing Graphene floating gates. hexagonal Boron Nitride (hBN) as a dielectric layer to achieve high-performance non-volatile memory.

Ultrafast Dynamics Visualization

3D Time-Resolved Surface Plot representing carrier density evolution following a femtosecond laser pulse. Interactive visualization powered by Plotly.js.

Research Gallery

WeS2 Field-Effect Transistor (FET) with Cr, Au contacts

Graphene floating gate memory device architecture

Cross-sectional view of a vdW heterostructure stack

Theoretical Framework

The time-dependent Schrödinger equation governing the evolution of the wave function $\Psi(x, t)$:

\[i\hbar \frac{\partial}{\partial t}\Psi(\mathbf{r},t) = \left [ \frac{-\hbar^2}{2m}\nabla^2 + V(\mathbf{r},t)\right ] \Psi(\mathbf{r},t)\]

Maxwell's Equations in vacuum, demonstrating electromagnetic propagation:

\[\nabla \cdot \mathbf{E} = 0, \quad \nabla \cdot \mathbf{B} = 0\] \[\nabla \times \mathbf{E} = -\frac{\partial \mathbf{B}}{\partial t}, \quad \nabla \times \mathbf{B} = \mu_0 \epsilon_0 \frac{\partial \mathbf{E}}{\partial t}\]

Drain current ($I_D$) in the linear region for a MOSFET/FET:

\[I_D = \mu_n C_{ox} \frac{W}{L} \left[ (V_{GS} - V_{th})V_{DS} - \frac{1}{2}V_{DS}^2 \right]\]